IPL65R165CFDAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

165m Ω @ 9.3A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

NO LEAD

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Terminal Position :

Single

Continuous Drain Current (ID) :

21.3A

Current - Continuous Drain (Id) @ 25°C :

21.3A Tc

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Factory Lead Time :

18 Weeks

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

2340pF @ 100V

Series :

CoolMOS™

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4.5V @ 900μA

Number of Pins :

4

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

67A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Halogen Free :

Halogen Free

Operating Temperature :

-40°C~150°C TJ

Mount :

Surface Mount

Power Dissipation-Max :

195W Tc

Max Dual Supply Voltage :

650V

Drain-source On Resistance-Max :

0.165Ohm

Moisture Sensitivity Level (MSL) :

2A (4 Weeks)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

4-PowerTSFN

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Published :

2013