IPL60R360P6SATMA1
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- Mfr.Part #
- IPL60R360P6SATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 11.3A 8THINPAK
- Stock
- 26,106
- In Stock ：
- 26,106
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.36ohm
- Number of Channels :
- 1
- Weight :
- 75.891673mg
- Power Dissipation-Max :
- 89.3W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- DRAIN
- Package / Case :
- 8-PowerTDFN
- Published :
- 2008
- JESD-30 Code :
- R-PDSO-N5
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 100V
- FET Type :
- N-Channel
- Series :
- CoolMOS™ P6
- Element Configuration :
- Single
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4.5V @ 370μA
- Operating Temperature :
- -40°C~150°C TJ
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 30A
- Mount :
- Surface Mount
- Max Dual Supply Voltage :
- 600V
- Rise Time :
- 7ns
- Terminal Form :
- NO LEAD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Contains Lead
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Fall Time (Typ) :
- 7 ns
- Turn On Delay Time :
- 12 ns
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 247 mJ
- Halogen Free :
- Halogen Free
- Current - Continuous Drain (Id) @ 25°C :
- 11.3A Tc
- Continuous Drain Current (ID) :
- 11.3A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 33 ns
- Factory Lead Time :
- 18 Weeks
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 4.5A, 10V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IPL60R360P6SATMA1
N-Channel Tape & Reel (TR) 360m Ω @ 4.5A, 10V ±20V 1010pF @ 100V 22nC @ 10V 8-PowerTDFN
IPL60R360P6SATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 247 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1010pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11.3A amps.It is [33 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30A.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.As it is powered by 600V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPL60R360P6SATMA1 Features
the avalanche energy rating (Eas) is 247 mJ
a continuous drain current (ID) of 11.3A
the turn-off delay time is 33 ns
based on its rated peak drain current 30A.
IPL60R360P6SATMA1 Applications
There are a lot of Infineon Technologies
IPL60R360P6SATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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