IPL60R185CFD7AUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

S-PSSO-N4

Transistor Application :

SWITCHING

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

14A

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1199pF @ 400V

Mounting Type :

Surface Mount

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

185m Ω @ 6A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Terminal Form :

NO LEAD

Vgs(th) (Max) @ Id :

4.5V @ 300µA

Drain-source On Resistance-Max :

0.185Ohm

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Published :

2014

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

51A

Series :

CoolMOS™ CFD7

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

4-PowerTSFN

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

85W Tc

Avalanche Energy Rating (Eas) :

60 mJ

DS Breakdown Voltage-Min :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel