IPL60R185C7AUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Number of Pins :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

2A (4 Weeks)

Transistor Element Material :

SILICON

Series :

CoolMOS™ C7

Published :

2008

Factory Lead Time :

18 Weeks

Terminal Form :

NO LEAD

Package / Case :

4-PowerTSFN

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

600V

JESD-609 Code :

e3

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 260μA

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Case Connection :

DRAIN

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

185m Ω @ 5.3A, 10V

Avalanche Energy Rating (Eas) :

53 mJ

Power Dissipation-Max :

77W Tc

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Number of Terminations :

4

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Continuous Drain Current (ID) :

13A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 400V

Drain-source On Resistance-Max :

0.185Ohm

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

13A Tc