IPI50R399CPXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

560V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Pbfree Code :

yes

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 100V

Power Dissipation :

83W

Vgs (Max) :

±20V

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

399m Ω @ 4.9A, 10V

Packaging :

Tube

Height :

9.45mm

Pulsed Drain Current-Max (IDM) :

20A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Length :

10.2mm

Mount :

Through Hole

Number of Terminations :

3

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Rise Time :

14ns

Element Configuration :

Single

Turn-Off Delay Time :

80 ns

Width :

4.5mm

Case Connection :

DRAIN

Turn On Delay Time :

35 ns

Vgs(th) (Max) @ Id :

3.5V @ 330μA

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

9A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

83W Tc

Max Dual Supply Voltage :

500V

Number of Pins :

3

Continuous Drain Current (ID) :

9A

Avalanche Energy Rating (Eas) :

215 mJ

Factory Lead Time :

8 Weeks