IPI50R140CP
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- Mfr.Part #
- IPI50R140CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 23A TO262-3
- Stock
- 1,405
- In Stock ：
- 1,405
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.5V @ 930μA
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 23A
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Rise Time :
- 14ns
- Turn-Off Delay Time :
- 80 ns
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 14A, 10V
- Halogen Free :
- Halogen Free
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 192W
- Series :
- CoolMOS™
- Nominal Vgs :
- 3 V
- Max Dual Supply Voltage :
- 500V
- Gate to Source Voltage (Vgs) :
- 20V
- Dual Supply Voltage :
- 550V
- Turn On Delay Time :
- 35 ns
- Termination :
- Through Hole
- Power Dissipation-Max :
- 192W Tc
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- Fall Time (Typ) :
- 8 ns
- Radiation Hardening :
- No
- Published :
- 2007
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2540pF @ 100V
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Datasheets
- IPI50R140CP
N-Channel Tube 140m Ω @ 14A, 10V ±20V 2540pF @ 100V 64nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI50R140CP Overview
The maximum input capacitance of this device is 2540pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 23A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 500V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPI50R140CP Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
IPI50R140CP Applications
There are a lot of Infineon Technologies
IPI50R140CP applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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