IPI50R250CP
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- Mfr.Part #
- IPI50R250CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 10,500
- In Stock ：
- 10,500
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Series :
- CoolMOS™
- Packaging :
- Tube
- Power Dissipation-Max :
- 114W Tc
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 11 ns
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Rise Time :
- 14ns
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1420pF @ 100V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Avalanche Energy Rating (Eas) :
- 345 mJ
- Published :
- 2008
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.25Ohm
- Vgs(th) (Max) @ Id :
- 3.5V @ 520µA
- Max Dual Supply Voltage :
- 500V
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 80 ns
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 13A
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 7.8A, 10V
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 114W
- Turn On Delay Time :
- 35 ns
- Halogen Free :
- Halogen Free
- Datasheets
- IPI50R250CP
N-Channel Tube 250m Ω @ 7.8A, 10V ±20V 1420pF @ 100V 36nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI50R250CPXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 345 mJ.A device's maximum input capacitance is 1420pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 500V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPI50R250CPXKSA1 Features
the avalanche energy rating (Eas) is 345 mJ
a continuous drain current (ID) of 13A
the turn-off delay time is 80 ns
IPI50R250CPXKSA1 Applications
There are a lot of Infineon Technologies
IPI50R250CPXKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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