IPI50R299CP
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- Mfr.Part #
- IPI50R299CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 9,978
- In Stock ：
- 9,978
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 6.6A, 10V
- Pulsed Drain Current-Max (IDM) :
- 26A
- Power Dissipation :
- 104W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 104W Tc
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.299Ohm
- Pin Count :
- 3
- Series :
- CoolMOS™
- Turn-Off Delay Time :
- 80 ns
- Factory Lead Time :
- 8 Weeks
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 500V
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Drain to Source Breakdown Voltage :
- 550V
- Continuous Drain Current (ID) :
- 12A
- Operating Mode :
- ENHANCEMENT MODE
- Halogen Free :
- Halogen Free
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1190pF @ 100V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 12 ns
- Rise Time :
- 14ns
- Gate to Source Voltage (Vgs) :
- 20V
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 289 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Number of Elements :
- 1
- Datasheets
- IPI50R299CP
N-Channel Tube 299m Ω @ 6.6A, 10V ±20V 1190pF @ 100V 31nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI50R299CPXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 289 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1190pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 550V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 550V.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 26A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPI50R299CPXKSA1 Features
the avalanche energy rating (Eas) is 289 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 26A.
a 500V drain to source voltage (Vdss)
IPI50R299CPXKSA1 Applications
There are a lot of Infineon Technologies
IPI50R299CPXKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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