IPG20N06S3L-35

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-PDSO-F6

Published :

2008

Terminal Form :

Flat

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Number of Terminations :

6

Avalanche Energy Rating (Eas) :

55 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

30W

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Continuous Drain Current (ID) :

20A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Max Power Dissipation :

30W

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

2 N-Channel (Dual)

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

35m Ω @ 11A, 10V

Drain to Source Voltage (Vdss) :

55V

Case Connection :

DRAIN

FET Feature :

Logic Level Gate

Package / Case :

8-PowerVDFN

Number of Elements :

2

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

55V

Vgs(th) (Max) @ Id :

2.2V @ 15μA

JESD-609 Code :

e3

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 25V

Base Part Number :

*PG20N06

Drain-source On Resistance-Max :

0.035Ohm

Mounting Type :

Surface Mount