IPG16N10S4-61

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

3.5V @ 9μA

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Turn-Off Delay Time :

5 ns

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Published :

2011

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Dual Supply Voltage :

100V

Rise Time :

1ns

JESD-609 Code :

e3

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Continuous Drain Current (ID) :

16A

FET Feature :

Standard

Drain-source On Resistance-Max :

0.061Ohm

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

61m Ω @ 16A, 10V

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101, OptiMOS™

Pulsed Drain Current-Max (IDM) :

64A

Avalanche Energy Rating (Eas) :

33 mJ

FET Type :

2 N-Channel (Dual)

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Mounting Type :

Surface Mount

Feedback Cap-Max (Crss) :

20 pF

Factory Lead Time :

12 Weeks

Terminal Finish :

Tin (Sn)

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Turn On Delay Time :

3 ns

Number of Terminations :

6

Power - Max :

29W

Case Connection :

DRAIN

Max Power Dissipation :

29W

JESD-30 Code :

R-PDSO-F6