IPG16N10S461AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2012

Mount :

Surface Mount

Continuous Drain Current (ID) :

16A

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Package / Case :

8-PowerVDFN

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

3.5V @ 9μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

not_compliant

Max Power Dissipation :

29W

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Avalanche Energy Rating (Eas) :

33 mJ

Series :

Automotive, AEC-Q101, OptiMOS™

FET Feature :

Standard

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.061Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Pins :

8

Transistor Element Material :

SILICON

Terminal Form :

Flat

Lead Free :

Contains Lead

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

100V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

64A

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

61m Ω @ 16A, 10V

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount, Wettable Flank

FET Type :

2 N-Channel (Dual)