IPG15N06S3L-45

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-PowerVDFN

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain Current-Max (Abs) (ID) :

17A

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Series :

OptiMOS™

FET Feature :

Logic Level Gate

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Continuous Drain Current (ID) :

15A

Drain-source On Resistance-Max :

0.045Ohm

Power - Max :

21W

Vgs(th) (Max) @ Id :

2.2V @ 10μA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Max Power Dissipation :

21W

Number of Pins :

8

Qualification Status :

Not Qualified

Terminal Form :

Flat

Published :

2008

Rds On (Max) @ Id, Vgs :

45m Ω @ 10A, 10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F6

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Pin Count :

8

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

1420pF @ 25V

Avalanche Energy Rating (Eas) :

47 mJ

DS Breakdown Voltage-Min :

55V

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

60A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount