IPF09N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 20μA

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

75 mJ

Series :

OptiMOS™

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1642pF @ 15V

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Power Dissipation-Max :

63W Tc

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

25V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

25V

Number of Terminations :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

8.6m Ω @ 30A, 10V

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

4

Drain Current-Max (Abs) (ID) :

50A

JESD-609 Code :

e3

Published :

2008

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.0148Ohm

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

350A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63