IPF04N03LA
- Mfr.Part #
- IPF04N03LA
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 50A TO252-3
- Stock
- 6,062
- In Stock :
- 6,062
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Reach Compliance Code :
- Unknown
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- JEDEC-95 Code :
- TO-252AA
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Terminal Finish :
- MATTE TIN
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 600 mJ
- FET Type :
- N-Channel
- Series :
- OptiMOS™
- JESD-30 Code :
- R-PSSO-G3
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 50A, 10V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5199pF @ 15V
- Pin Count :
- 4
- Voltage - Rated DC :
- 25V
- Continuous Drain Current (ID) :
- 50A
- Drain-source On Resistance-Max :
- 0.0059Ohm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 50A
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Published :
- 2008
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 30μA
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 115W Tc
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 5V
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IPF04N03LA
IPF04N03LA Documents

N-Channel Tape & Reel (TR) 3.8m Ω @ 50A, 10V ±20V 5199pF @ 15V 41nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
IPF04N03LA Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 600 mJ.The maximum input capacitance of this device is 5199pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IPF04N03LA Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 50A
IPF04N03LA Applications
There are a lot of Infineon Technologies
IPF04N03LA applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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