IPF04N03LA
- Mfr.Part #
- IPF04N03LA
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 50A TO252-3
- Stock
- 6,062
- In Stock :
- 6,062
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 5199pF @ 15V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.0059Ohm
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 50A, 10V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- OptiMOS™
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 2V @ 30μA
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Terminal Finish :
- MATTE TIN
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Qualification Status :
- Not Qualified
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Continuous Drain Current (ID) :
- 50A
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G3
- Transistor Element Material :
- SILICON
- Lead Free :
- Contains Lead
- Pin Count :
- 4
- JEDEC-95 Code :
- TO-252AA
- Power Dissipation-Max :
- 115W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- 25V
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 5V
- Published :
- 2008
- Mounting Type :
- Surface Mount
- Current Rating :
- 50A
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Surface Mount
- Datasheets
- IPF04N03LA

N-Channel Tape & Reel (TR) 3.8m Ω @ 50A, 10V ±20V 5199pF @ 15V 41nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
IPF04N03LA Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 600 mJ.The maximum input capacitance of this device is 5199pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IPF04N03LA Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 50A
IPF04N03LA Applications
There are a lot of Infineon Technologies
IPF04N03LA applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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