IPF04N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PSSO-G3

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

5199pF @ 15V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

50A

Vgs (Max) :

±20V

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

25V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 50A, 10V

Pulsed Drain Current-Max (IDM) :

350A

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0057Ohm

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

4

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Series :

OptiMOS™

DS Breakdown Voltage-Min :

25V

ECCN Code :

EAR99

FET Type :

N-Channel

Power Dissipation-Max :

115W Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Qualification Status :

Not Qualified

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Vgs(th) (Max) @ Id :

2V @ 30μA

Avalanche Energy Rating (Eas) :

600 mJ

Terminal Finish :

MATTE TIN