IPF05N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

25V

Drain-source On Resistance-Max :

0.0084Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

JESD-30 Code :

R-PSSO-G3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

4

Number of Elements :

1

Surface Mount :

yes

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3110pF @ 15V

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

25V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

94W Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

350A

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

300 mJ

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 30A, 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

FET Type :

N-Channel

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

RoHS Status :

RoHS Compliant

Series :

OptiMOS™

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

2V @ 50μA

Published :

2008

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

50A