IPF05N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

50A

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0084Ohm

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

25V

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

350A

Published :

2008

Mounting Type :

Surface Mount

ECCN Code :

EAR99

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3110pF @ 15V

Number of Elements :

1

Transistor Element Material :

SILICON

Pin Count :

4

JESD-30 Code :

R-PSSO-G3

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

25V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 50μA

Power Dissipation-Max :

94W Tc

Avalanche Energy Rating (Eas) :

300 mJ