IPD5N25S3430ATMA1
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- Mfr.Part #
- IPD5N25S3430ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 5A TO252-3
- Stock
- 1,688
- In Stock ：
- 1,688
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Max Dual Supply Voltage :
- 250V
- Lead Free :
- Contains Lead
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Supplier Device Package :
- PG-TO252-3-313
- Continuous Drain Current (ID) :
- 5A
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Operating Temperature :
- 175°C
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 10V
- Input Capacitance :
- 422pF
- Fall Time (Typ) :
- 5 ns
- Mounting Type :
- Surface Mount
- Rds On Max :
- 430 mΩ
- Power Dissipation-Max :
- 41W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 422pF @ 25V
- Drain to Source Voltage (Vdss) :
- 250V
- Turn-Off Delay Time :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 430mOhm @ 5A, 10V
- Turn On Delay Time :
- 3 ns
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 370mOhm
- Rise Time :
- 2ns
- Halogen Free :
- Halogen Free
- Vgs(th) (Max) @ Id :
- 4V @ 13μA
- Published :
- 2012
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IPD5N25S3430ATMA1
N-Channel Tape & Reel (TR) 430mOhm @ 5A, 10V ±20V 422pF @ 25V 6.2nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD5N25S3430ATMA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 422pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 370mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 250V.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPD5N25S3430ATMA1 Features
a continuous drain current (ID) of 5A
the turn-off delay time is 8 ns
single MOSFETs transistor is 370mOhm
a 250V drain to source voltage (Vdss)
IPD5N25S3430ATMA1 Applications
There are a lot of Infineon Technologies
IPD5N25S3430ATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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