IPD50N04S308ATMA1
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- Mfr.Part #
- IPD50N04S308ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 50A TO252-3
- Stock
- 35,338
- In Stock ：
- 35,338
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 6 ns
- Terminal Position :
- Single
- Rise Time :
- 7ns
- Series :
- OptiMOS™
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 68W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2350pF @ 25V
- Max Dual Supply Voltage :
- 40V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 11 ns
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 68W Tc
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 50A
- Pulsed Drain Current-Max (IDM) :
- 200A
- Factory Lead Time :
- 26 Weeks
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 40μA
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 16 ns
- Published :
- 2007
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 50A, 10V
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IPD50N04S308ATMA1
N-Channel Tape & Reel (TR) 7.5m Ω @ 50A, 10V ±20V 2350pF @ 25V 35nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N04S308ATMA1 Overview
A device's maximum input capacitance is 2350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 50A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPD50N04S308ATMA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 16 ns
based on its rated peak drain current 200A.
IPD50N04S308ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N04S308ATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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