IPD50N03S2L06ATMA1
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- Mfr.Part #
- IPD50N03S2L06ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 50A TO252-31
- Stock
- 49,295
- In Stock ：
- 49,295
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 50A
- Rise Time :
- 30ns
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 40 ns
- Terminal Position :
- Single
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 6.4m Ω @ 50A, 10V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 136W Tc
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2V @ 85µA
- Pulsed Drain Current-Max (IDM) :
- 200A
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Halogen Free :
- Halogen Free
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0092Ohm
- Reach Compliance Code :
- not_compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 30V
- Fall Time (Typ) :
- 15 ns
- Published :
- 2006
- Factory Lead Time :
- 10 Weeks
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 25V
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Turn On Delay Time :
- 10 ns
- Series :
- Automotive, AEC-Q101, OptiMOS™
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Datasheets
- IPD50N03S2L06ATMA1
N-Channel Tape & Reel (TR) 6.4m Ω @ 50A, 10V ±20V 1900pF @ 25V 68nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N03S2L06ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 200A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 30V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IPD50N03S2L06ATMA1 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 50A
the turn-off delay time is 40 ns
based on its rated peak drain current 200A.
IPD50N03S2L06ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N03S2L06ATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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