IPD50N03S207ATMA1
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- Mfr.Part #
- IPD50N03S207ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 50A TO252-3
- Stock
- 27,614
- In Stock ：
- 27,614
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Reference Standard :
- AEC-Q101
- Turn On Delay Time :
- 18 ns
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 50A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 25V
- Published :
- 2006
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 2
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 26 ns
- Lead Free :
- Contains Lead
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Series :
- OptiMOS™
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 136W Tc
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Additional Feature :
- ULTRA LOW RESISTANCE
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Rds On (Max) @ Id, Vgs :
- 7.3m Ω @ 50A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Fall Time (Typ) :
- 30 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Max Dual Supply Voltage :
- 30V
- Vgs(th) (Max) @ Id :
- 4V @ 85µA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pulsed Drain Current-Max (IDM) :
- 200A
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- Rise Time :
- 40ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IPD50N03S207ATMA1
N-Channel Tape & Reel (TR) 7.3m Ω @ 50A, 10V ±20V 2000pF @ 25V 68nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N03S207ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 250 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2000pF @ 25V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 26 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 30V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD50N03S207ATMA1 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 50A
the turn-off delay time is 26 ns
based on its rated peak drain current 200A.
IPD50N03S207ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N03S207ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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