IPD50N03S207ATMA1
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- Mfr.Part #
- IPD50N03S207ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 50A TO252-3
- Stock
- 27,614
- In Stock ：
- 27,614
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reference Standard :
- AEC-Q101
- Halogen Free :
- Halogen Free
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 10 Weeks
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 85µA
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 26 ns
- Max Dual Supply Voltage :
- 30V
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Published :
- 2006
- FET Type :
- N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 30 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 7.3m Ω @ 50A, 10V
- Rise Time :
- 40ns
- Turn On Delay Time :
- 18 ns
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 200A
- Additional Feature :
- ULTRA LOW RESISTANCE
- Power Dissipation-Max :
- 136W Tc
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 50A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Lead Free :
- Contains Lead
- Series :
- OptiMOS™
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Datasheets
- IPD50N03S207ATMA1
N-Channel Tape & Reel (TR) 7.3m Ω @ 50A, 10V ±20V 2000pF @ 25V 68nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N03S207ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 250 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2000pF @ 25V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 26 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 30V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD50N03S207ATMA1 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 50A
the turn-off delay time is 26 ns
based on its rated peak drain current 200A.
IPD50N03S207ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N03S207ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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