IPD50R950CEAUMA1
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- Mfr.Part #
- IPD50R950CEAUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3
- Datasheet
- Download
- Description
- CONSUMER
- Stock
- 68,827
- In Stock ：
- 68,827
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Lead Free :
- Contains Lead, Lead Free
- Factory Lead Time :
- 18 Weeks
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Input Capacitance :
- 231pF
- Min Operating Temperature :
- -55°C
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Max Dual Supply Voltage :
- 500V
- Terminal Form :
- Gull wing
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 500V
- Length :
- 6.73mm
- Avalanche Energy Rating (Eas) :
- 68 mJ
- Turn-Off Delay Time :
- 25 ns
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 19.5 ns
- Pbfree Code :
- yes
- Halogen Free :
- Halogen Free
- Pulsed Drain Current-Max (IDM) :
- 12.8A
- Drain to Source Breakdown Voltage :
- 500V
- Continuous Drain Current (ID) :
- 4.3A
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Width :
- 6.22mm
- Max Power Dissipation :
- 34W
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Rds On Max :
- 950 mΩ
- Rise Time :
- 4.9ns
- Number of Pins :
- 3
- Polarity/Channel Type :
- N-Channel
- Height :
- 2.41mm
- Turn On Delay Time :
- 7 ns
- Drain to Source Resistance :
- 950mOhm
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Power Dissipation :
- 34W
- Datasheets
- IPD50R950CEAUMA1
Tape & Reel (TR) 500V TO-252-3
IPD50R950CEAUMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 68 mJ.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 12.8A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 950mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 500V.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.
IPD50R950CEAUMA1 Features
the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 12.8A.
single MOSFETs transistor is 950mOhm
a 500V drain to source voltage (Vdss)
IPD50R950CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD50R950CEAUMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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