IPD50R800CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.8Ohm

ECCN Code :

EAR99

Pbfree Code :

No

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

13V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain Current-Max (Abs) (ID) :

5A

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

CoolMOS™

Case Connection :

DRAIN

Power Dissipation-Max :

40W Tc

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

Number of Elements :

1

FET Feature :

Super Junction

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

500V

Rds On (Max) @ Id, Vgs :

800m Ω @ 1.5A, 13V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Terminations :

2

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 10V

Surface Mount :

yes

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

15.5A

Avalanche Energy Rating (Eas) :

83 mJ

Published :

2015

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel