IPD50R800CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Lead Free :

Contains Lead

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Case Connection :

DRAIN

Drain to Source Resistance :

800mOhm

Published :

2008

Mount :

Surface Mount

Package / Case :

DPAK

Drain to Source Breakdown Voltage :

550V

JEDEC-95 Code :

TO-252

Number of Elements :

1

Reach Compliance Code :

not_compliant

Factory Lead Time :

18 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Rise Time :

5.5ns

Fall Time (Typ) :

15.9 ns

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

83 mJ

Max Operating Temperature :

150°C

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

500V

Transistor Application :

SWITCHING

Number of Terminations :

2

Power Dissipation :

40W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Dual Supply Voltage :

500V

Turn-Off Delay Time :

26 ns

Max Power Dissipation :

40W

Continuous Drain Current (ID) :

5A

JESD-30 Code :

R-PSSO-G2