IPD50R800CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

13V

Continuous Drain Current (ID) :

5A

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Rise Time :

5.5ns

Max Operating Temperature :

150°C

Number of Pins :

3

Turn On Delay Time :

6.2 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

60W Tc

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

Turn-Off Delay Time :

26 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Supplier Device Package :

PG-TO252-3

Series :

CoolMOS™ CE

Fall Time (Typ) :

15.9 ns

Input Capacitance :

280pF

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

800mOhm @ 1.5A, 13V

Published :

2012

Rds On Max :

800 mΩ

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Vgs (Max) :

±20V