IPD50R650CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Series :

CoolMOS™

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

500V

Pulsed Drain Current-Max (IDM) :

19A

Input Capacitance (Ciss) (Max) @ Vds :

342pF @ 100V

Drain Current-Max (Abs) (ID) :

6.1A

Rds On (Max) @ Id, Vgs :

650m Ω @ 1.8A, 13V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

-55°C~150°C TJ

Published :

2017

Vgs (Max) :

±20V

Surface Mount :

yes

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

2

Transistor Element Material :

SILICON

Pbfree Code :

No

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Drain-source On Resistance-Max :

0.65Ohm

Drive Voltage (Max Rds On,Min Rds On) :

13V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

102 mJ

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

6.1A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

47W Tc

JESD-30 Code :

R-PSSO-G2