IPD50R650CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

13 ns

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Number of Terminations :

2

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

6.1A

Rds On Max :

650 mΩ

Polarity/Channel Type :

N-Channel

Input Capacitance :

342pF

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Weight :

3.949996g

Turn-Off Delay Time :

27 ns

Published :

2008

Drain to Source Breakdown Voltage :

500V

Rise Time :

5ns

Power Dissipation :

47W

Mount :

Surface Mount

Number of Pins :

3

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Min Operating Temperature :

-55°C

Element Configuration :

Single

Drain to Source Resistance :

650mOhm

Turn On Delay Time :

6 ns

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Max Power Dissipation :

47W

Transistor Application :

SWITCHING

Package / Case :

TO-252-3

Number of Elements :

1