IPD50R520CPATMA1

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Mfr.Part #
IPD50R520CPATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252
Datasheet
Download
Description
LOW POWER_LEGACY
Stock
27,564
In Stock :
27,564

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
80 ns
Drain to Source Breakdown Voltage :
550V
Radiation Hardening :
No
Threshold Voltage :
3V
Published :
2008
REACH SVHC :
No SVHC
Number of Elements :
1
Power Dissipation :
66W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Resistance :
520mOhm
Package / Case :
TO-252
Fall Time (Typ) :
17 ns
Nominal Vgs :
3 V
Input Capacitance :
680pF
Max Power Dissipation :
66W
Min Operating Temperature :
-55°C
Turn On Delay Time :
35 ns
Height :
2.41mm
Max Operating Temperature :
150°C
Dual Supply Voltage :
550V
Rds On Max :
520 mΩ
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Max Dual Supply Voltage :
500V
Termination :
SMD/SMT
Length :
6.73mm
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Rise Time :
14ns
Drain to Source Voltage (Vdss) :
500V
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Width :
6.22mm
Continuous Drain Current (ID) :
7.1A
Datasheets
IPD50R520CPATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD50R520CPATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252, Number of Pins:3, IPD50R520CPATMA1 pinout, IPD50R520CPATMA1 datasheet PDF, IPD50R520CPATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD50R520CPATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD50R520CPATMA1


Tape & Reel (TR) 500V TO-252

IPD50R520CPATMA1 Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.1A.When VGS=550V, and ID flows to VDS at 550VVDS, the drain-source breakdown voltage is 550V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 520mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 500V power supply, it is capable of handling a dual voltage maximum.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.

IPD50R520CPATMA1 Features


a continuous drain current (ID) of 7.1A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 80 ns
single MOSFETs transistor is 520mOhm
a threshold voltage of 3V
a 500V drain to source voltage (Vdss)


IPD50R520CPATMA1 Applications


There are a lot of Infineon Technologies
IPD50R520CPATMA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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