IPD50R520CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Case Connection :

DRAIN

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

550V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.52Ohm

Power Dissipation-Max :

66W Tc

Mounting Type :

Surface Mount

Pbfree Code :

yes

Reach Compliance Code :

Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Pin Count :

3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

520m Ω @ 3.8A, 10V

Drain Current-Max (Abs) (ID) :

7.1A

Avalanche Energy Rating (Eas) :

166 mJ

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

15A

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc

HTS Code :

8541.29.00.95

JEDEC-95 Code :

TO-252AA

Terminal Position :

Single

Number of Terminations :

2