IPD50R500CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs :

18.7nC @ 10V

JEDEC-95 Code :

TO-252AA

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

24A

FET Feature :

Super Junction

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No

Input Capacitance (Ciss) (Max) @ Vds :

433pF @ 100V

Series :

CoolMOS™

Power Dissipation-Max :

57W Tc

Surface Mount :

yes

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

500m Ω @ 2.3A, 13V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.5Ohm

Drive Voltage (Max Rds On,Min Rds On) :

13V

Number of Terminations :

2

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

500V

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Factory Lead Time :

6 Weeks

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2013

DS Breakdown Voltage-Min :

500V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

129 mJ