IPD50R500CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

500V

Input Capacitance :

433pF

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

13V

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Channels :

1

Continuous Drain Current (ID) :

7.6A

Weight :

3.949996g

Input Capacitance (Ciss) (Max) @ Vds :

433pF @ 100V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

12 ns

Turn-Off Delay Time :

30 ns

Rds On Max :

500 mΩ

Drain to Source Resistance :

500MOhm

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18.7nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

500mOhm @ 2.3A, 13V

Power Dissipation :

57W

Element Configuration :

Single

Published :

2013

Number of Pins :

3

Series :

CoolMOS™ CE

Turn On Delay Time :

6 ns

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

57W Tc

Max Operating Temperature :

150°C

Number of Elements :

1

Rise Time :

5ns

Supplier Device Package :

PG-TO252-3