IPD50R3K0CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

84pF @ 100V

Rds On (Max) @ Id, Vgs :

3 Ω @ 400mA, 13V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

4.3nC @ 10V

Terminal Form :

Gull wing

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Pbfree Code :

No

Pulsed Drain Current-Max (IDM) :

4.1A

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 30μA

Drive Voltage (Max Rds On,Min Rds On) :

13V

Drain-source On Resistance-Max :

3Ohm

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500V

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

18 mJ

Mounting Type :

Surface Mount

Published :

2013

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Power Dissipation-Max :

18W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

1.7A

Number of Elements :

1

Factory Lead Time :

6 Weeks

Series :

CoolMOS™ CE

JESD-30 Code :

R-PSSO-G2