IPD50R3K0CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 30μA

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

13V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Terminal Position :

Single

Power Dissipation-Max :

26W Tc

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

JESD-609 Code :

e3

Factory Lead Time :

18 Weeks

Max Dual Supply Voltage :

500V

Drain-source On Resistance-Max :

3Ohm

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Pbfree Code :

yes

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

18 mJ

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

4.3nC @ 10V

Pulsed Drain Current-Max (IDM) :

4.1A

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Published :

2013

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™ CE

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

1.7A

Input Capacitance (Ciss) (Max) @ Vds :

84pF @ 100V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

3 Ω @ 400mA, 13V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED