IPD50R399CPBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

20A

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

150°C

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.399Ohm

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

9A

Pin Count :

4

Number of Elements :

1

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

500V

Time@Peak Reflow Temperature-Max (s) :

40

Avalanche Energy Rating (Eas) :

215 mJ

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Number of Terminations :

2

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel