IPD50R399CPATMA1
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- Mfr.Part #
- IPD50R399CPATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3
- Datasheet
- Download
- Description
- LOW POWER_LEGACY
- Stock
- 69,368
- In Stock ：
- 69,368
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Termination :
- SMD/SMT
- Number of Channels :
- 1
- Threshold Voltage :
- 3V
- Max Operating Temperature :
- 150°C
- Rise Time :
- 14ns
- Turn On Delay Time :
- 35 ns
- Width :
- 6.223mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 890pF
- Package / Case :
- TO-252-3
- Nominal Vgs :
- 3 V
- Drain to Source Resistance :
- 399mOhm
- Length :
- 6.73mm
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 80 ns
- Height :
- 2.413mm
- Max Dual Supply Voltage :
- 500V
- Max Power Dissipation :
- 83W
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 83W
- Dual Supply Voltage :
- 550V
- Mount :
- Surface Mount
- Weight :
- 3.949996g
- Continuous Drain Current (ID) :
- 9A
- Factory Lead Time :
- 26 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 550V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Element Configuration :
- Single
- Fall Time (Typ) :
- 14 ns
- Rds On Max :
- 399 mΩ
- Published :
- 2008
- Drain to Source Voltage (Vdss) :
- 500V
- Min Operating Temperature :
- -55°C
- Datasheets
- IPD50R399CPATMA1
Tape & Reel (TR) 500V TO-252-3
IPD50R399CPATMA1 Overview
Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=550V, and this device has a drain-to-source breakdown voltage of 550V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 399mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 500V, it supports maximum dual supply voltages.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).
IPD50R399CPATMA1 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 80 ns
single MOSFETs transistor is 399mOhm
a threshold voltage of 3V
a 500V drain to source voltage (Vdss)
IPD50R399CPATMA1 Applications
There are a lot of Infineon Technologies
IPD50R399CPATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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