IPD50R380CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

173 mJ

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

24.8nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

32.4A

FET Feature :

Super Junction

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

584pF @ 100V

ECCN Code :

EAR99

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.2A, 13V

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

9.9A Tc

Pin Count :

3

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

Power Dissipation-Max :

73W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.38Ohm

Terminal Form :

Gull wing

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

14.1A

Drive Voltage (Max Rds On,Min Rds On) :

13V

Vgs(th) (Max) @ Id :

3.5V @ 260μA

Series :

CoolMOS™

Transistor Application :

SWITCHING

Published :

2014

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1