IPD50R2K0CEBTMA1

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Mfr.Part #
IPD50R2K0CEBTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3
Datasheet
Download
Description
CONSUMER
Stock
21,408
In Stock :
21,408

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1
RoHS Status :
RoHS Compliant
Continuous Drain Current (ID) :
2.4A
Min Operating Temperature :
-55°C
ECCN Code :
EAR99
Published :
2013
Number of Pins :
3
Fall Time (Typ) :
38 ns
Width :
6.22mm
Drain to Source Voltage (Vdss) :
500V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Length :
6.73mm
Input Capacitance :
124pF
Drain to Source Resistance :
2Ohm
Rise Time :
5ns
Polarity/Channel Type :
N-Channel
Mount :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
No
Height :
2.41mm
Turn On Delay Time :
6 ns
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Max Operating Temperature :
150°C
Gate to Source Voltage (Vgs) :
30V
Max Power Dissipation :
22W
Factory Lead Time :
6 Weeks
Weight :
3.949996g
Turn-Off Delay Time :
21 ns
Element Configuration :
Single
Package / Case :
TO-252-3
Datasheets
IPD50R2K0CEBTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD50R2K0CEBTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Package / Case:TO-252-3, IPD50R2K0CEBTMA1 pinout, IPD50R2K0CEBTMA1 datasheet PDF, IPD50R2K0CEBTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD50R2K0CEBTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD50R2K0CEBTMA1


Tape & Reel (TR) 500V TO-252-3

IPD50R2K0CEBTMA1 Overview


The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 21 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 2Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 500V drain to source voltage (Vdss).

IPD50R2K0CEBTMA1 Features


a continuous drain current (ID) of 2.4A
the turn-off delay time is 21 ns
single MOSFETs transistor is 2Ohm
a 500V drain to source voltage (Vdss)


IPD50R2K0CEBTMA1 Applications


There are a lot of Infineon Technologies
IPD50R2K0CEBTMA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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