IPD50R2K0CEBTMA1
- Mfr.Part #
- IPD50R2K0CEBTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3
- Datasheet
- Download
- Description
- CONSUMER
- Stock
- 21,408
- In Stock :
- 21,408
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 2.4A
- Min Operating Temperature :
- -55°C
- ECCN Code :
- EAR99
- Published :
- 2013
- Number of Pins :
- 3
- Fall Time (Typ) :
- 38 ns
- Width :
- 6.22mm
- Drain to Source Voltage (Vdss) :
- 500V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.73mm
- Input Capacitance :
- 124pF
- Drain to Source Resistance :
- 2Ohm
- Rise Time :
- 5ns
- Polarity/Channel Type :
- N-Channel
- Mount :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- No
- Height :
- 2.41mm
- Turn On Delay Time :
- 6 ns
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 30V
- Max Power Dissipation :
- 22W
- Factory Lead Time :
- 6 Weeks
- Weight :
- 3.949996g
- Turn-Off Delay Time :
- 21 ns
- Element Configuration :
- Single
- Package / Case :
- TO-252-3
- Datasheets
- IPD50R2K0CEBTMA1

Tape & Reel (TR) 500V TO-252-3
IPD50R2K0CEBTMA1 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 21 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 2Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 500V drain to source voltage (Vdss).
IPD50R2K0CEBTMA1 Features
a continuous drain current (ID) of 2.4A
the turn-off delay time is 21 ns
single MOSFETs transistor is 2Ohm
a 500V drain to source voltage (Vdss)
IPD50R2K0CEBTMA1 Applications
There are a lot of Infineon Technologies
IPD50R2K0CEBTMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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