IPD50R2K0CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

500V

RoHS Status :

ROHS3 Compliant

Height :

2.55mm

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Mount :

Surface Mount

Series :

CoolMOS™ CE

Turn-Off Delay Time :

21 ns

Transistor Element Material :

SILICON

Power Dissipation-Max :

33W Tc

Factory Lead Time :

18 Weeks

FET Type :

N-Channel

Max Dual Supply Voltage :

500V

Continuous Drain Current (ID) :

3.6A

Drive Voltage (Max Rds On,Min Rds On) :

13V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3.5V @ 50μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Number of Pins :

3

Halogen Free :

Halogen Free

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

Power Dissipation :

33W

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Contains Lead, Lead Free

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

2Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Number of Elements :

1

Mounting Type :

Surface Mount

Published :

2008

Transistor Application :

SWITCHING

Turn On Delay Time :

6 ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Input Capacitance (Ciss) (Max) @ Vds :

124pF @ 100V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2 Ω @ 600mA, 13V