IPD50R280CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

231 mJ

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Pulsed Drain Current-Max (IDM) :

42.9A

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

773pF @ 100V

Terminal Position :

Single

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

3.5V @ 350μA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

DS Breakdown Voltage-Min :

500V

Power Dissipation-Max :

119W Tc

Drain-source On Resistance-Max :

0.28Ohm

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.2A, 13V

Factory Lead Time :

52 Weeks

Series :

CoolMOS™ CE

Drive Voltage (Max Rds On,Min Rds On) :

13V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

500V

Published :

2011

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

32.6nC @ 10V

Transistor Application :

SWITCHING

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2