IPD50R1K4CEBTMA1

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Mfr.Part #
IPD50R1K4CEBTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 3.1A TO252-3
Stock
49,705
In Stock :
49,705

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
13V
Input Capacitance (Ciss) (Max) @ Vds :
178pF @ 100V
Drain Current-Max (Abs) (ID) :
3.1A
Surface Mount :
yes
Reach Compliance Code :
Compliant
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN Code :
EAR99
FET Type :
N-Channel
Configuration :
Single
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 900mA, 13V
Series :
CoolMOS™ CE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
1nC @ 10V
Vgs(th) (Max) @ Id :
3.5V @ 70μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
RoHS Compliant
Packaging :
Cut Tape (CT)
Mounting Type :
Surface Mount
Published :
2013
Current - Continuous Drain (Id) @ 25°C :
3.1A Tc
Power Dissipation-Max :
25W Tc
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
No
Drain to Source Voltage (Vdss) :
500V
Datasheets
IPD50R1K4CEBTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD50R1K4CEBTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, IPD50R1K4CEBTMA1 pinout, IPD50R1K4CEBTMA1 datasheet PDF, IPD50R1K4CEBTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD50R1K4CEBTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD50R1K4CEBTMA1


N-Channel Cut Tape (CT) 1.4 Ω @ 900mA, 13V ±20V 178pF @ 100V 1nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD50R1K4CEBTMA1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 178pF @ 100V.The drain current is the maximum continuous current this device can conduct, which is 3.1A.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 13V volts (13V).

IPD50R1K4CEBTMA1 Features


a 500V drain to source voltage (Vdss)


IPD50R1K4CEBTMA1 Applications


There are a lot of Infineon Technologies
IPD50R1K4CEBTMA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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