IPD50R1K4CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

2.41mm

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Terminal Finish :

Tin (Sn)

Rise Time :

6ns

Reach Compliance Code :

not_compliant

Series :

CoolMOS™ CE

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 900mA, 13V

Length :

6.73mm

Input Capacitance (Ciss) (Max) @ Vds :

178pF @ 100V

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.5V @ 70μA

Power Dissipation :

25W

Fall Time (Typ) :

30 ns

Drain to Source Voltage (Vdss) :

500V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

42W Tc

Turn On Delay Time :

6.5 ns

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Vgs (Max) :

±20V

Number of Elements :

1

Width :

6.22mm

Factory Lead Time :

18 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Pbfree Code :

yes

FET Type :

N-Channel

Turn-Off Delay Time :

23 ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

13V

Drain to Source Breakdown Voltage :

550V

Continuous Drain Current (ID) :

3.1A

Packaging :

Tape and Reel (TR)