IPD50P04P4L11ATMA1
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- Mfr.Part #
- IPD50P04P4L11ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 50A TO252-3
- Stock
- 718,056
- In Stock ：
- 718,056
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 12 ns
- Series :
- OptiMOS™
- Vgs(th) (Max) @ Id :
- 2.2V @ 85µA
- Factory Lead Time :
- 17 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 50A
- Drain to Source Voltage (Vdss) :
- 40V
- Rise Time :
- 9ns
- Power Dissipation :
- 58W
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Halogen Free :
- Halogen Free
- Packaging :
- Tape and Reel (TR)
- Max Dual Supply Voltage :
- -40V
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- FET Type :
- P-Channel
- Turn-Off Delay Time :
- 46 ns
- Power Dissipation-Max :
- 58W Tc
- Rds On (Max) @ Id, Vgs :
- 10.6m Ω @ 50A, 10V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Vgs (Max) :
- ±16V
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 16V
- Pulsed Drain Current-Max (IDM) :
- 200A
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 39 ns
- Published :
- 2010
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Datasheets
- IPD50P04P4L11ATMA1
P-Channel Tape & Reel (TR) 10.6m Ω @ 50A, 10V ±16V 3900pF @ 25V 59nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50P04P4L11ATMA1 Overview
The maximum input capacitance of this device is 3900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 46 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 200A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its -40V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IPD50P04P4L11ATMA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 46 ns
based on its rated peak drain current 200A.
a 40V drain to source voltage (Vdss)
IPD50P04P4L11ATMA1 Applications
There are a lot of Infineon Technologies
IPD50P04P4L11ATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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