IPD50P04P413ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

17 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

26 Weeks

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 50A, 10V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Gate to Source Voltage (Vgs) :

20V

Reference Standard :

AEC-Q101

Turn-Off Delay Time :

22 ns

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3670pF @ 25V

Halogen Free :

Halogen Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Avalanche Energy Rating (Eas) :

18 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

50A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

20A

Rise Time :

10ns

Fall Time (Typ) :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0126Ohm

Max Dual Supply Voltage :

-40V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 85µA

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

ECCN Code :

EAR99

Terminal Position :

Single

Series :

OptiMOS™

Drain to Source Voltage (Vdss) :

40V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Power Dissipation-Max :

58W Tc

Number of Elements :

1

FET Type :

P-Channel

Published :

2011