IPD50P03P4L11ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drain-source On Resistance-Max :

0.0105Ohm

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

200A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Packaging :

Tape and Reel (TR)

Vgs (Max) :

+5V, -16V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 50A, 10V

DS Breakdown Voltage-Min :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

50A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 25V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

100 mJ

Factory Lead Time :

26 Weeks

Transistor Application :

SWITCHING

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 85µA

Reference Standard :

AEC-Q101

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

FET Type :

P-Channel

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Power Dissipation-Max :

58W Tc

RoHS Status :

ROHS3 Compliant