IPD50N12S3L15ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.02Ohm

Transistor Element Material :

SILICON

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

JEDEC-95 Code :

TO-252

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

50A

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Published :

2016

Terminal Position :

Single

Reference Standard :

AEC-Q101

Pulsed Drain Current-Max (IDM) :

200A

Operating Temperature (Min) :

-55°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

120V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

330 mJ

Terminal Form :

Gull wing

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks