IPD50N10S3L16ATMA1
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- Mfr.Part #
- IPD50N10S3L16ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 50A TO252-3
- Stock
- 151,069
- In Stock ：
- 151,069
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 50A
- Number of Pins :
- 3
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 100W Tc
- Lead Free :
- Contains Lead
- Input Capacitance (Ciss) (Max) @ Vds :
- 4180pF @ 25V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 50A, 10V
- Drain-source On Resistance-Max :
- 0.0199Ohm
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2011
- JESD-609 Code :
- e3
- Max Dual Supply Voltage :
- 100V
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 29 ns
- Pulsed Drain Current-Max (IDM) :
- 200A
- Factory Lead Time :
- 14 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 10 ns
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Rise Time :
- 5ns
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 2.4V @ 60μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reference Standard :
- AEC-Q101
- Terminal Position :
- Single
- Series :
- OptiMOS™
- Datasheets
- IPD50N10S3L16ATMA1
N-Channel Tape & Reel (TR) 15m Ω @ 50A, 10V ±20V 4180pF @ 25V 64nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N10S3L16ATMA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4180pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 29 ns.Peak drain current is 200A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 100V, it supports dual voltages up to the maximum.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IPD50N10S3L16ATMA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 29 ns
based on its rated peak drain current 200A.
IPD50N10S3L16ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N10S3L16ATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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