IPD50N08S413ATMA1
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- Mfr.Part #
- IPD50N08S413ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 50A TO252-3
- Stock
- 6,683
- In Stock ：
- 6,683
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 72W
- Halogen Free :
- Halogen Free
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 12 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 33µA
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 200A
- Rds On (Max) @ Id, Vgs :
- 13.2m Ω @ 50A, 10V
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Operating Temperature :
- -55°C~175°C TJ
- Lead Free :
- Contains Lead
- Avalanche Energy Rating (Eas) :
- 76 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 72W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1711pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 50A
- Published :
- 2013
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 80V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Datasheets
- IPD50N08S413ATMA1
N-Channel Tape & Reel (TR) 13.2m Ω @ 50A, 10V ±20V 1711pF @ 25V 30nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N08S413ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 76 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1711pF @ 25V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 200A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 80V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD50N08S413ATMA1 Features
the avalanche energy rating (Eas) is 76 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 200A.
IPD50N08S413ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N08S413ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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