IPD50N06S4L12ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Max Dual Supply Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Turn-Off Delay Time :

25 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

50A

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

12m Ω @ 50A, 10V

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

33 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Rise Time :

2ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

200A

Vgs(th) (Max) @ Id :

2.2V @ 20μA

Mounting Type :

Surface Mount

Vgs (Max) :

±16V

Series :

Automotive, AEC-Q101, OptiMOS™

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

16V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Pbfree Code :

yes

Weight :

3.949996g

Input Capacitance (Ciss) (Max) @ Vds :

2890pF @ 25V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

50W Tc

JESD-609 Code :

e3

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

5 ns

Packaging :

Tape and Reel (TR)

Published :

2009

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Turn On Delay Time :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V