IPD50N06S4L08ATMA2
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- Mfr.Part #
- IPD50N06S4L08ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO252-31
- Stock
- 142,071
- In Stock ：
- 142,071
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 1999
- Gate to Source Voltage (Vgs) :
- 16V
- Max Dual Supply Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- PG-TO252-3-11
- Rds On Max :
- 7.8 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Weight :
- 3.949996g
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Max Operating Temperature :
- 175°C
- Turn On Delay Time :
- 9 ns
- Vgs(th) (Max) @ Id :
- 2.2V @ 35μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 4780pF @ 25V
- Rise Time :
- 2ns
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 71W Tc
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 8 ns
- Factory Lead Time :
- 12 Weeks
- FET Type :
- N-Channel
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Vgs (Max) :
- ±16V
- Input Capacitance :
- 4.78nF
- Continuous Drain Current (ID) :
- 50A
- Rds On (Max) @ Id, Vgs :
- 7.8mOhm @ 50A, 10V
- Turn-Off Delay Time :
- 45 ns
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Datasheets
- IPD50N06S4L08ATMA2
N-Channel Tape & Reel (TR) 7.8mOhm @ 50A, 10V ±16V 4780pF @ 25V 64nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N06S4L08ATMA2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4780pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.In addition to 60V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IPD50N06S4L08ATMA2 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 45 ns
a 60V drain to source voltage (Vdss)
IPD50N06S4L08ATMA2 Applications
There are a lot of Infineon Technologies
IPD50N06S4L08ATMA2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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