IPD50N06S409ATMA2
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- Mfr.Part #
- IPD50N06S409ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO252-31
- Stock
- 749,040
- In Stock ：
- 749,040
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Length :
- 6.5mm
- Width :
- 6.22mm
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.009Ohm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 34µA
- Height :
- 2.3mm
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Halogen Free :
- Halogen Free
- Turn-Off Delay Time :
- 20 ns
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 50A, 10V
- Turn On Delay Time :
- 15 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3785pF @ 25V
- Max Dual Supply Voltage :
- 60V
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 5 ns
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 50A
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 40ns
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 47.1nC @ 10V
- Avalanche Energy Rating (Eas) :
- 87 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Power Dissipation-Max :
- 71W Tc
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 200A
- Datasheets
- IPD50N06S409ATMA2
N-Channel Tape & Reel (TR) 9m Ω @ 50A, 10V ±20V 3785pF @ 25V 47.1nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N06S409ATMA2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 87 mJ.The maximum input capacitance of this device is 3785pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 200A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 60V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPD50N06S409ATMA2 Features
the avalanche energy rating (Eas) is 87 mJ
a continuous drain current (ID) of 50A
the turn-off delay time is 20 ns
based on its rated peak drain current 200A.
IPD50N06S409ATMA2 Applications
There are a lot of Infineon Technologies
IPD50N06S409ATMA2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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