IPD50N06S409ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

200A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

71W Tc

Avalanche Energy Rating (Eas) :

87 mJ

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

50A

Number of Terminations :

2

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Reference Standard :

AEC-Q101

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

9m Ω @ 50A, 10V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.009Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

3785pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 34µA

Terminal Position :

Single